Iyini imiphumela ye-silicon ephezulu noma ephansi ekusebenzeni komshini we-grey cast iron 200?

Ithonya le-silicon ekusebenzeni kwe-grey cast iron alimane nje libe "ngcono" noma "libi kakhulu", kodwa kukhona uhla olufanele.

Umthelela wayo ubonakala ngokuyinhloko kulezi zici ezilandelayo:

1. Umthelela omuhle: uthuthukisa i-graphitization futhi uthuthukise ukucutshungulwa. Umsebenzi oyinhloko: I-Silicon iyisici esiqinile se-graphitizing. Ingakhuthaza ukuna kwekhabhoni ngendlela yegraphite (kunokuba i-Fe-C eqinile futhi ephuka usimende). I-Mechanism: I-Graphite ngokwayo iyisithambiso esihle esiqinile. Phakathi nenqubo yokusika, i-graphite eveziwe endaweni yokuphumula ye-chip inganikeza ukugcoba phakathi kwendawo yokusika yangaphambili kanye ne-chip, kanye naphakathi kwendawo yokusika emuva kanye nomshini owenziwe ngomshini, ukunciphisa ukungqubuzana, amandla okusika, nokuqoqwa kokushisa. Umphumela: Lokhu kwenza ama-chips athambekele kakhulu ekuphukeni futhi kuvikela ithuluzi, ngaleyo ndlela kuthuthukisa impilo yamathuluzi kanye nokushelela kwendawo. Insimbi empunga ene-pearlite njenge-matrix kanye ne-graphite yohlobo olufanayo lwe-A inokusebenza okungcono kakhulu.

2. Imiphumela engemihle (eyanele noma eyeqile): Okuqukethwe kwe-silicon ephansi (<1.0%): Inkinga: Ikhono elinganele le-graphitization lingase liholele ekwakhekeni kwama-carbide amahhala ekubunjweni, ikakhulukazi ezindaweni ezinezindonga ezincane noma ezipholile ngokushesha. Umthelela ekusebenzeni kahle: Usimende unzima kakhulu (>800HB) futhi uyisigaba esibi esibi. Ukuba khona kwayo kuzokwandisa kakhulu ukuguga kwamathuluzi, okuholela ebunzimeni bomshini kanye nezindawo ezimaholoholo. Lesi ngesinye sezimo ezimbi kakhulu. Okuqukethwe kwe-silicon ephezulu (>2.8% -3.0%, kuye ngesimo esithile):

Inkinga 1: Ukuvundisa: Isixazululo esiqinile se-silicon ku-ferrite sizoyiqinisa futhi siyiqinise. I-silicon eyeqile izozinza futhi yandise inani lesigaba se-ferrite, okuholela ekwehleni kokuqina okuphelele kodwa ukwanda kokuqina kwe-matrix. Umthelela wokucubungula: Lena yiyo kanye inkinga ohlangabezane nayo ngaphambilini. I-matrix ye-ferrite ethambile futhi eqinile izokhiqiza into "yethuluzi lokunamathela" ngesikhathi sokusika, ukwenza amadiphozithi ama-chip, okuholela ekugugekeni okuqinile kwamathuluzi, ukuklebhuka kwendawo, nama-chips amade. Ukusetshenzwa kuyawohloka.

Umbuzo 2: Ukuqina kukonke kwe-matrix: I-silicon ngokwayo ingathuthukisa amandla nobulukhuni be-ferrite. Uma okuqukethwe kwe-silicon kuphezulu kakhulu, ngisho nangaphandle kwe-cementite, yonke i-matrix ye-pearlite+ferrite izoba nzima ngenxa yokuqiniswa kwesisombululo esiqinile se-silicon, okwandisa ukumelana nokusika.

Inkinga yesi-3: Ukuwohloka kwe-graphite morphology: I-silicon eyeqile ingase ibangele ama-graphite flakes ukuba amaholo noma angalingani, yenze buthaka i-matrix, futhi ithinte umphumela wokuphuka kwe-chip. Isifinyezo se-curve yethonya le-silicon ekuqhubekiseni phambili: I-Machinability ifinyelela okuhle kakhulu kokuqukethwe kwe-silicon emaphakathi. Kokubili okuphansi kakhulu (ukukhiqiza usimende) nokuphezulu kakhulu (okubangela ukwakheka kwe-ferrite noma amandla e-matrix eqile) kungawohloza ukusebenza kahle. Ibanga elifanele lokulawula le-silicon ku-HT200 yizinga eliphansi kakhulu lensimbi empunga, "200" emele amandla aqinile angekho ngaphansi kuka-200 MPa.

Idizayini yokuqamba kufanele igxile ekuhlangabezaneni nalawa mandla njengenhloso eyinhloko, kuyilapho kucutshungulwa kokubili ukusebenza kokulingisa nokucubungula.

Ku-HT200, uhla lokulawula olujwayelekile lwe-silicon ngokuvamile luphakathi kuka-1.8% no-2.4%. Lobu uhla lwakudala olulinganisa amandla, ukugaywa, kanye nokusebenza kanzima.

2. Kumele kubhekwe ngokuhambisana nokuqukethwe kwekhabhoni: Umqondo we-carbon equivalent (CE) awusho lutho ukuxoxa nge-silicon kuphela futhi kufanele ubhekwe ngokuhambisana ne-carbon (C). Sisebenzisa okulingana nekhabhoni ukuhlola kabanzi ukuthambekela kwe-graphitization yensimbi ekhonjiwe: CE=C%+(Si%+P%)/3. Ku-HT200, i-carbon elingana ne-CE ivamise ukulawulwa phakathi kuka-3.9% no-4.2%. Umgomo: Ukuthola i-100% pearlite matrix+esatshalaliswe ngokulinganayo uhlobo lwe-A-graphite ngaphandle kwama-carbides amahhala.

3. Isu lokuqamba: Ukuze kuqinisekiswe amandla nokucutshungulwa okuhle, idizayini yokuqamba ye-HT200 ivamise ukulandela isimiso "sokulingana kwekhabhoni ephezulu+i-alloying ephansi" noma "ukwelashwa okulingana nekhabhoni emaphakathi+i-incubation". Inketho A (evumelana kakhulu nokusebenziseka kalula): Yamukela i-CE eduze nomkhawulo ophezulu (ofana no-4.1-4.2%), okusho ukuthi u-C no-Si ophezulu, ukuze uqinisekise ukungabikho okuphelele kwama-carbides nesisekelo esihle sokusebenza. Kodwa ukuze unxephezele ukwehla kwamandla okubangelwa i-CE ephezulu, kungase kudingeke ukwengeza inani elincane lezinto zokuzinzisa i-pearlite, njenge-Sn (tin, 0.05-0.1%) noma i-Cu (ithusi, 0.3-0.6%). Lezi zakhi zingacwenga futhi zizinzise i-pearlite, iqinisekise ukuthi amandla ahlangabezana nezindinganiso kuyilapho angabeki engozini ukusebenza. Inketho B (yonga kakhulu): Yamukela i-CE emaphakathi (efana no-3.9-4.0%), kuhlanganiswe nokwelashwa kokufukamela okuphumelelayo. Ukwelashwa kokuzala kungakhuthaza ngempumelelo i-graphite nucleation, ngisho noma okuqukethwe kwe-C no-Si kungaphakeme, kungagwema ukukhishwa okumhlophe futhi kuthole i-graphite encane yohlobo lwe-A, ngaleyo ndlela iqinisekise amandla nokucutshungulwa.

Unganquma kanjani isilinganiso esithile se-silicon ku-carbon ye-HT200 ngaphakathi kwebanga lokulawula le-silicon kuya ku-carbon ratio? I-silicon to carbon ratio idinga ukucatshangelwa ngokuhambisana ne-carbon equivalent (CE) kanye nokujiya kodonga lokuphonsa. I-Carbon Equivalent CE=C%+(Si%+P%)/3 Isimiso: Nakuba uqinisekisa ukuthi izidingo zamandla e-HT200 ziyahlangatshezwa, zama ukusebenzisa okulingana nekhabhoni ephakeme ukuze ufeze ukusebenza okungcono kokulingisa nokucubungula.

Kuphakanyiswe izinyathelo ezithile:

Thola okulinganayo kwekhabhoni okuhlosiwe (CE): Ku-HT200, i-CE ivamise ukulawulwa ku-3.9% -4.1%, okuyiyona ndlela. 2. Ngokwesu lokukhetha ukushuba kodonga: Ezingxenyeni ezijwayelekile ezinokuqina kodonga oluphakathi (15-30mm), i-CE ephakeme (efana no-4.05%) kanye ne-silicon ephakathi ukuya phezulu kuya ku-carbon ratio (efana no-0.65-0.70) ingasetshenziswa. Lokhu kuqinisekisa ukuhlela okuhle nokucutshungulwa okuhle kakhulu. Ngokusakazwa okukhulu nokukhudlwana: Ukuvimbela amandla anganele abangelwa i-graphite eqinile, i-CE (efana no-3.95%) kanye ne-silicon carbon ratio (efana no-0.60-0.65) ingancishiswa ngokufanele, kanye nenani elincane lezinto eziqinisa i-pearlite (ezifana ne-Cu, Sn) zingasetshenziswa ngokuhlangene. Ngokulingisa okuzacile: Ukuvimbela ukulingwa okumhlophe, isilinganiso se-CE ne-silicon carbon singanyuswa ngokufanelekile (njengo-0.70-0.75) ukuze kuthuthukiswe ikhono le-graphitization.

Isibonelo sedizayini yesithako sithatha ithagethi engu-CE ka-4.0% kanye nethagethi ye-silicon to carbon ratio engu-0.65. Singabala ukuthi uma u-C=3.30%, bese u-Si=3.30% × 0.65 ≈ 2.15%. Ukuqinisekisa CE=3.30+(2.15)/3 ≈ 3.30+0.72=4.02% (kuhlangabezana nezimfuneko). Lena ifomula yesithako ye-HT200 yakudala kakhulu futhi ezinzile. Ngalesi sisekelo, ukuthuthukiswa kungafinyelelwa ngokulungisa kahle (njengokukhulisa u-C ukuya ku-3.35%, u-Si ukuya ku-2.20%, i-Si/C ≈ 0.66).